Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexTvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-363 (SC-88)
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Isolated
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Kaiščių skaičius
6
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
3
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1A
Kilmės šalis
China
Produkto aprašymas
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 13,35
€ 0,267 Each (In a Pack of 50) (be PVM)
€ 16,15
€ 0,323 Each (In a Pack of 50) (su PVM)
Standartas
50

€ 13,35
€ 0,267 Each (In a Pack of 50) (be PVM)
€ 16,15
€ 0,323 Each (In a Pack of 50) (su PVM)
Standartas
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
50 - 550 | € 0,267 | € 13,35 |
600 - 1450 | € 0,12 | € 5,98 |
1500+ | € 0,093 | € 4,66 |
Techniniai dokumentai
Specifikacijos
Markė
DiodesZetexTvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-363 (SC-88)
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Isolated
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Kaiščių skaičius
6
Maximum Forward Voltage Drop
500mV
Number of Elements per Chip
3
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1A
Kilmės šalis
China
Produkto aprašymas
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.