Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3

RS kodas: 919-0922Gamintojas: VishayGamintojo kodas: SUM110P06-08L-E3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1 672,00

€ 2,09 Each (On a Reel of 800) (be PVM)

€ 2 023,12

€ 2,529 Each (On a Reel of 800) (su PVM)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
sticker-462

€ 1 672,00

€ 2,09 Each (On a Reel of 800) (be PVM)

€ 2 023,12

€ 2,529 Each (On a Reel of 800) (su PVM)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.41mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina