Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Plotis
6.22mm
Number of Elements per Chip
1
Ilgis
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.38mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
2V
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 72,68
€ 0,727 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 87,94
€ 0,88 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100
€ 72,68
€ 0,727 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 87,94
€ 0,88 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
100
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 100 - 240 | € 0,727 | € 7,27 |
| 250 - 490 | € 0,67 | € 6,70 |
| 500 - 990 | € 0,631 | € 6,31 |
| 1000+ | € 0,525 | € 5,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
200 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Plotis
6.22mm
Number of Elements per Chip
1
Ilgis
6.73mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.38mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
2V
Kilmės šalis
Malaysia
Produkto aprašymas
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products