Toshiba Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 336,30
€ 0,112 Each (On a Reel of 3000) (be PVM)
€ 406,92
€ 0,136 Each (On a Reel of 3000) (su PVM)
3000
€ 336,30
€ 0,112 Each (On a Reel of 3000) (be PVM)
€ 406,92
€ 0,136 Each (On a Reel of 3000) (su PVM)
3000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ToshibaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4e+008 Ω
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products