STMicroelectronics STripFET II N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STP55NF06L
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Serija
STripFET II
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 8,31
€ 1,662 Each (In a Pack of 5) (be PVM)
€ 10,06
€ 2,011 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 8,31
€ 1,662 Each (In a Pack of 5) (be PVM)
€ 10,06
€ 2,011 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 5 | € 1,662 | € 8,31 |
| 10 - 20 | € 1,52 | € 7,60 |
| 25 - 95 | € 1,425 | € 7,12 |
| 100 - 495 | € 1,092 | € 5,46 |
| 500+ | € 0,94 | € 4,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Serija
STripFET II
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products