STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 900 V, 3-Pin TO-220FP STP3NK90ZFP
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
TO-220FP
Serija
MDmesh, SuperMESH
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
10.4mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
16.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 4,99
€ 0,998 Each (In a Pack of 5) (be PVM)
€ 6,04
€ 1,207 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 4,99
€ 0,998 Each (In a Pack of 5) (be PVM)
€ 6,04
€ 1,207 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 5 | € 0,998 | € 4,99 |
| 10 - 95 | € 0,826 | € 4,13 |
| 100 - 495 | € 0,62 | € 3,10 |
| 500 - 995 | € 0,527 | € 2,64 |
| 1000+ | € 0,452 | € 2,26 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
TO-220FP
Serija
MDmesh, SuperMESH
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Ilgis
10.4mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
16.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products