Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M5
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Plotis
4.6mm
Ilgis
10.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
9.15mm
Kilmės šalis
Malaysia
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 125,88
€ 2,518 Each (In a Tube of 50) (be PVM)
€ 152,31
€ 3,047 Each (In a Tube of 50) (su PVM)
50

€ 125,88
€ 2,518 Each (In a Tube of 50) (be PVM)
€ 152,31
€ 3,047 Each (In a Tube of 50) (su PVM)
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 2,518 | € 125,88 |
100 - 200 | € 2,422 | € 121,12 |
250 - 450 | € 2,375 | € 118,75 |
500 - 950 | € 2,328 | € 116,38 |
1000+ | € 2,232 | € 111,62 |
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M5
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Plotis
4.6mm
Ilgis
10.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
9.15mm
Kilmės šalis
Malaysia
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.