STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220 STP100N6F7
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Serija
STripFET F7
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.4mm
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 14,25
€ 1,425 Each (In a Pack of 10) (be PVM)
€ 17,24
€ 1,724 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 14,25
€ 1,425 Each (In a Pack of 10) (be PVM)
€ 17,24
€ 1,724 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 1,425 | € 14,25 |
| 50 - 90 | € 1,378 | € 13,78 |
| 100 - 240 | € 1,235 | € 12,35 |
| 250 - 490 | € 1,092 | € 10,92 |
| 500+ | € 1,045 | € 10,45 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220
Serija
STripFET F7
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.4mm
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products