STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 7-Pin H2PAK-7 SCT027H65G3AG
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Serija
SCT
Pakuotės tipas
H²PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Kilmės šalis
China
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P.O.A.
Each (On a Reel of 1000) (be PVM)
1000
P.O.A.
Each (On a Reel of 1000) (be PVM)
1000
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Serija
SCT
Pakuotės tipas
H²PAK-7
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products