ROHM RQ6E050AT P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR

RS kodas: 124-6805Gamintojas: ROHMGamintojo kodas: RQ6E050ATTCR
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Serija

RQ6E050AT

Pakuotės tipas

TSMT-6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-18 V, +18 V

Plotis

1.8mm

Number of Elements per Chip

1

Ilgis

3mm

Typical Gate Charge @ Vgs

20.8 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

Produkto aprašymas

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 8,10

€ 0,324 Each (In a Pack of 25) (be PVM)

€ 9,80

€ 0,392 Each (In a Pack of 25) (su PVM)

ROHM RQ6E050AT P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR
sticker-462

€ 8,10

€ 0,324 Each (In a Pack of 25) (be PVM)

€ 9,80

€ 0,392 Each (In a Pack of 25) (su PVM)

ROHM RQ6E050AT P-Channel MOSFET, 5 A, 30 V, 6-Pin TSMT-6 RQ6E050ATTCR
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

ROHM

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Serija

RQ6E050AT

Pakuotės tipas

TSMT-6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-18 V, +18 V

Plotis

1.8mm

Number of Elements per Chip

1

Ilgis

3mm

Typical Gate Charge @ Vgs

20.8 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.95mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Thailand

Produkto aprašymas

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more