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onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G

RS kodas: 780-4723Gamintojas: onsemiGamintojo kodas: NTMS4177PR2G
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 6,78

€ 0,678 Each (In a Pack of 10) (be PVM)

€ 8,20

€ 0,82 Each (In a Pack of 10) (su PVM)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Pasirinkite pakuotės tipą
sticker-462

€ 6,78

€ 0,678 Each (In a Pack of 10) (be PVM)

€ 8,20

€ 0,82 Each (In a Pack of 10) (su PVM)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
10 - 20€ 0,678€ 6,78
30 - 90€ 0,52€ 5,20
100 - 190€ 0,408€ 4,08
200 - 390€ 0,393€ 3,93
400+€ 0,383€ 3,83

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more