onsemi Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Plotis
1.35mm
Transistor Material
Si
Ilgis
2.2mm
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
2
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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€ 6,21
€ 0,311 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 7,51
€ 0,376 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
20
€ 6,21
€ 0,311 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 7,51
€ 0,376 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
20
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Patikrinkite dar kartą.
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Plotis
1.35mm
Transistor Material
Si
Ilgis
2.2mm
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
2
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products