Nexperia N-Channel MOSFET, 100 A, 40 V, 4-Pin LFPAK, SOT-669 PSMN2R6-40YS,115
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
LFPAK, SOT-669
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
5mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Kilmės šalis
Philippines
Produkto aprašymas
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 6,41
€ 1,282 Each (In a Pack of 5) (be PVM)
€ 7,76
€ 1,551 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 6,41
€ 1,282 Each (In a Pack of 5) (be PVM)
€ 7,76
€ 1,551 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 10 | € 1,282 | € 6,41 |
| 15 - 70 | € 1,14 | € 5,70 |
| 75 - 370 | € 0,998 | € 4,99 |
| 375 - 745 | € 0,94 | € 4,70 |
| 750+ | € 0,917 | € 4,58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
LFPAK, SOT-669
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
5mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
4.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Kilmės šalis
Philippines
Produkto aprašymas
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products