IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
300 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
16.26mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
156 nC @ 10 V
Plotis
5.3mm
Transistor Material
Si
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11,21
€ 11,21 už 1 vnt. (be PVM)
€ 13,56
€ 13,56 už 1 vnt. (su PVM)
Standartas
1
€ 11,21
€ 11,21 už 1 vnt. (be PVM)
€ 13,56
€ 13,56 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 11,21 |
| 10+ | € 9,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
300 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
16.26mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
156 nC @ 10 V
Plotis
5.3mm
Transistor Material
Si
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products