International Rectifier IRF7424PbF P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7424TRPBF
Techniniai dokumentai
Specifikacijos
Channel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SO-8
Serija
IRF7424PbF
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Ilgis
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
4mm
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 54,62
€ 1,092 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 66,09
€ 1,321 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
€ 54,62
€ 1,092 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 66,09
€ 1,321 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 50 - 90 | € 1,092 | € 10,92 |
| 100 - 240 | € 1,045 | € 10,45 |
| 250 - 490 | € 0,998 | € 9,98 |
| 500+ | € 0,944 | € 9,44 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Channel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SO-8
Serija
IRF7424PbF
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Ilgis
5mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
4mm
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products