Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 42 A, 55 V, 3-Pin DPAK IRFR1010ZTRPBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
55 V
Serija
HEXFET
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.0075 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
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€ 5,27
€ 0,527 Each (In a Pack of 10) (be PVM)
€ 6,38
€ 0,638 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 5,27
€ 0,527 Each (In a Pack of 10) (be PVM)
€ 6,38
€ 0,638 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
55 V
Serija
HEXFET
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.0075 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products