Infineon HEXFET N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
200 V
Serija
HEXFET
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
161 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.87mm
Maksimali darbinė temperatūra
+175 °C
Aukštis
20.7mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 7,98
€ 7,98 už 1 vnt. (be PVM)
€ 9,66
€ 9,66 už 1 vnt. (su PVM)
Standartas
1
€ 7,98
€ 7,98 už 1 vnt. (be PVM)
€ 9,66
€ 9,66 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
200 V
Serija
HEXFET
Pakuotės tipas
TO-247AC
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
161 nC @ 10 V
Plotis
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
15.87mm
Maksimali darbinė temperatūra
+175 °C
Aukštis
20.7mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products