Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 30 V, 8-Pin SOIC IRF9952PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N, P
Maximum Continuous Drain Current
2.3 A, 3.5 A
Maximum Drain Source Voltage
30 V
Serija
HEXFET
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
100 mΩ, 250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6.1 nC @ 10 V, 6.9 nC @ 10 V
Plotis
4mm
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
5mm
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 54,15
€ 54,15 1 Tube of 95 (be PVM)
€ 65,52
€ 65,52 1 Tube of 95 (su PVM)
1
€ 54,15
€ 54,15 1 Tube of 95 (be PVM)
€ 65,52
€ 65,52 1 Tube of 95 (su PVM)
1
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| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 54,15 |
| 5 - 9 | € 36,10 |
| 10 - 19 | € 32,11 |
| 20 - 49 | € 29,54 |
| 50+ | € 25,84 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N, P
Maximum Continuous Drain Current
2.3 A, 3.5 A
Maximum Drain Source Voltage
30 V
Serija
HEXFET
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
100 mΩ, 250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6.1 nC @ 10 V, 6.9 nC @ 10 V
Plotis
4mm
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
5mm
Aukštis
1.5mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products