Infineon OptiMOS™ 3 N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK IPB600N25N3GATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Serija
OptiMOS™ 3
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
9.45mm
Transistor Material
Si
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 22,80
€ 2,28 Each (In a Pack of 10) (be PVM)
€ 27,59
€ 2,759 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 22,80
€ 2,28 Each (In a Pack of 10) (be PVM)
€ 27,59
€ 2,759 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 10 | € 2,28 | € 22,80 |
| 20 - 40 | € 2,138 | € 21,38 |
| 50 - 90 | € 2,09 | € 20,90 |
| 100 - 240 | € 1,995 | € 19,95 |
| 250+ | € 1,852 | € 18,52 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Serija
OptiMOS™ 3
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Ilgis
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Plotis
9.45mm
Transistor Material
Si
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products