Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220 FP
Serija
OptiMOS™ 3
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.65mm
Number of Elements per Chip
1
Plotis
4.85mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 41,99
€ 0,84 Each (In a Tube of 50) (be PVM)
€ 50,81
€ 1,016 Each (In a Tube of 50) (su PVM)
50

€ 41,99
€ 0,84 Each (In a Tube of 50) (be PVM)
€ 50,81
€ 1,016 Each (In a Tube of 50) (su PVM)
50

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 0,84 | € 41,99 |
100 - 200 | € 0,647 | € 32,35 |
250 - 450 | € 0,621 | € 31,06 |
500 - 1200 | € 0,597 | € 29,83 |
1250+ | € 0,522 | € 26,08 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220 FP
Serija
OptiMOS™ 3
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.65mm
Number of Elements per Chip
1
Plotis
4.85mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.