N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

RS kodas: 710-3320Gamintojas: VishayGamintojo kodas: Si4134DY-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15.4 nC @ 10 V, 7.3 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,647

Each (In a Pack of 10) (be PVM)

€ 0,783

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,647

Each (In a Pack of 10) (be PVM)

€ 0,783

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 90€ 0,647€ 6,47
100 - 240€ 0,608€ 6,08
250 - 490€ 0,55€ 5,50
500 - 990€ 0,519€ 5,19
1000+€ 0,484€ 4,84

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15.4 nC @ 10 V, 7.3 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more