P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3

RS kodas: 710-4691PGamintojas: VishayGamintojo kodas: SI2333DS-T1-E3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

TO-236

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

750 mW

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

11.5 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

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Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
€ 0,459Už kiekviena vnt. (tiekiama riteje) (be PVM)

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P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3
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sticker-462

P.O.A.

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P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
€ 0,459Už kiekviena vnt. (tiekiama riteje) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

12 V

Pakuotės tipas

TO-236

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

750 mW

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

11.5 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
€ 0,459Už kiekviena vnt. (tiekiama riteje) (be PVM)