P-Channel MOSFET Transistor, 5.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333CDS-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Plotis
1.4mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
10
P.O.A.
10
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Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Plotis
1.4mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products