Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9020PBF
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
HVMDIP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5mm
Ilgis
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
6.3V
Aukštis
3.37mm
Kilmės šalis
Philippines
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 93,29
€ 0,933 Each (In a Tube of 100) (be PVM)
€ 112,88
€ 1,129 Each (In a Tube of 100) (su PVM)
100
€ 93,29
€ 0,933 Each (In a Tube of 100) (be PVM)
€ 112,88
€ 1,129 Each (In a Tube of 100) (su PVM)
100
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 100 - 100 | € 0,933 | € 93,29 |
| 200 - 400 | € 0,914 | € 91,39 |
| 500+ | € 0,867 | € 86,74 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
HVMDIP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
5mm
Ilgis
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
6.3V
Aukštis
3.37mm
Kilmės šalis
Philippines
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products