P-Channel MOSFET, 16 A, 80 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ481EP-T1_GE3
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Plotis
5mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Aukštis
1.07mm
Kilmės šalis
China
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€ 18,76
€ 0,75 Each (In a Pack of 25) (be PVM)
€ 22,70
€ 0,908 Each (In a Pack of 25) (su PVM)
Standartas
25
€ 18,76
€ 0,75 Each (In a Pack of 25) (be PVM)
€ 22,70
€ 0,908 Each (In a Pack of 25) (su PVM)
Standartas
25
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 25 - 75 | € 0,75 | € 18,76 |
| 100 - 475 | € 0,579 | € 14,46 |
| 500 - 975 | € 0,494 | € 12,35 |
| 1000+ | € 0,394 | € 9,86 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Serija
TrenchFET
Pakuotės tipas
PowerPAK SO-8L
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Plotis
5mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Aukštis
1.07mm
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products