P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3

RS kodas: 178-3717Gamintojas: Vishay SiliconixGamintojo kodas: SQJ415EP-T1_GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

PowerPAK SO-8L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Aukštis

1.07mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

China

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€ 1 245,45

€ 0,415 Each (On a Reel of 3000) (be PVM)

€ 1 506,99

€ 0,502 Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3
sticker-462

€ 1 245,45

€ 0,415 Each (On a Reel of 3000) (be PVM)

€ 1 506,99

€ 0,502 Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

PowerPAK SO-8L

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Aukštis

1.07mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more