N-Channel MOSFET Transistor, 45 A, 30 V, 8-Pin SOP Advanced Toshiba TPCA8019-H(TE12L,Q,M)

RS kodas: 415-392Gamintojas: ToshibaGamintojo kodas: TPCA8019-H(TE12L,Q,M)
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Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOP Advanced

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Plotis

5mm

Minimali darbinė temperatūra

-55 °C

Aukštis

0.95mm

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Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
€ 1,954Each (In a Pack of 10) (be PVM)
Sandėlio informacija laikinai nepasiekiama.

P.O.A.

Each (In a Pack of 5) (be PVM)

N-Channel MOSFET Transistor, 45 A, 30 V, 8-Pin SOP Advanced Toshiba TPCA8019-H(TE12L,Q,M)
Pasirinkite pakuotės tipą
sticker-462

P.O.A.

Each (In a Pack of 5) (be PVM)

N-Channel MOSFET Transistor, 45 A, 30 V, 8-Pin SOP Advanced Toshiba TPCA8019-H(TE12L,Q,M)
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
€ 1,954Each (In a Pack of 10) (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOP Advanced

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Plotis

5mm

Minimali darbinė temperatūra

-55 °C

Aukštis

0.95mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
Vishay N-Channel MOSFET, 20 A, 40 V, 8-Pin SOIC SI4124DY-T1-GE3
€ 1,954Each (In a Pack of 10) (be PVM)