N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

RS kodas: 133-2801Gamintojas: ToshibaGamintojo kodas: TK7P65W,RQ(S
brand-logo
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Serija

DTMOSIV

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

6.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Aukštis

2.3mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 7,29

€ 0,729 Each (In a Pack of 10) (be PVM)

€ 8,82

€ 0,882 Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S
sticker-462

€ 7,29

€ 0,729 Each (In a Pack of 10) (be PVM)

€ 8,82

€ 0,882 Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Serija

DTMOSIV

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

6.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Aukštis

2.3mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more