Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S

RS kodas: 896-2401Gamintojas: ToshibaGamintojo kodas: TK58A06N1,S4X(S
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Serija

TK

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

15mm

Kilmės šalis

China

Produkto aprašymas

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

€ 3,86

€ 0,771 Each (In a Pack of 5) (be PVM)

€ 4,67

€ 0,933 Each (In a Pack of 5) (su PVM)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
sticker-462

€ 3,86

€ 0,771 Each (In a Pack of 5) (be PVM)

€ 4,67

€ 0,933 Each (In a Pack of 5) (su PVM)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
5 - 45€ 0,771€ 3,86
50 - 95€ 0,636€ 3,18
100 - 245€ 0,578€ 2,89
250 - 495€ 0,565€ 2,83
500+€ 0,555€ 2,77

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Serija

TK

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

15mm

Kilmės šalis

China

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more