N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

RS kodas: 125-0532Gamintojas: ToshibaGamintojo kodas: TK10A60W,S4VX(M
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Aukštis

15mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 1,14

Each (In a Pack of 5) (be PVM)

€ 1,379

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

5

Galima įsigyti kartotiną kiekį 5
5€ 5,70
10€ 11,40
15€ 17,10
20€ 22,80
25€ 18,76
30€ 22,52
35€ 26,27
40€ 30,02
45€ 33,77
50€ 36,53
55€ 40,18
60€ 43,83
65€ 47,49
70€ 51,14
75€ 54,79
sticker-462

€ 1,14

Each (In a Pack of 5) (be PVM)

€ 1,379

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
Sandėlio informacija laikinai nepasiekiama.

5

Galima įsigyti kartotiną kiekį 5
5€ 5,70
10€ 11,40
15€ 17,10
20€ 22,80
25€ 18,76
30€ 22,52
35€ 26,27
40€ 30,02
45€ 33,77
50€ 36,53
55€ 40,18
60€ 43,83
65€ 47,49
70€ 51,14
75€ 54,79
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 20€ 1,14€ 5,70
25 - 45€ 0,75€ 3,75
50 - 120€ 0,731€ 3,65
125 - 245€ 0,713€ 3,57
250+€ 0,694€ 3,47

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Serija

DTMOSIV

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Aukštis

15mm

Forward Diode Voltage

1.7V

Kilmės šalis

Japan

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more