N-Channel MOSFET, 11 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17579Q3AT

RS kodas: 145-7677Gamintojas: Texas InstrumentsGamintojo kodas: CSD17579Q3AT
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

VSCONP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14.2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.5mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.5mm

Typical Gate Charge @ Vgs

5.3 nC @ 4.5 V

Aukštis

0.9mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Kilmės šalis

Philippines

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,35

Each (On a Reel of 250) (be PVM)

€ 0,423

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 11 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17579Q3AT
sticker-462

€ 0,35

Each (On a Reel of 250) (be PVM)

€ 0,423

Each (On a Reel of 250) (su PVM)

N-Channel MOSFET, 11 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17579Q3AT
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

VSCONP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14.2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.5mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.5mm

Typical Gate Charge @ Vgs

5.3 nC @ 4.5 V

Aukštis

0.9mm

Serija

NexFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1V

Kilmės šalis

Philippines

Produkto aprašymas

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more