N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Plotis
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Aukštis
1.1mm
Serija
NexFET
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 0,848
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,026
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
10
€ 0,848
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 1,026
Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 10 - 90 | € 0,848 | € 8,48 |
| 100 - 240 | € 0,61 | € 6,10 |
| 250 - 490 | € 0,573 | € 5,73 |
| 500 - 740 | € 0,537 | € 5,37 |
| 750+ | € 0,527 | € 5,27 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SON
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Plotis
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Aukštis
1.1mm
Serija
NexFET
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products