Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT

RS kodas: 168-4928Gamintojas: Texas InstrumentsGamintojo kodas: BQ500101DPCT
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Serija

NexFET

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

8 W

Transistor Configuration

Dual Base

Plotis

3.6mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+125 °C

Ilgis

4.6mm

Minimali darbinė temperatūra

-40 °C

Forward Diode Voltage

0.24V

Aukštis

1mm

Kilmės šalis

Philippines

Produkto aprašymas

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,267

Each (On a Reel of 250) (be PVM)

€ 0,323

Each (On a Reel of 250) (su PVM)

Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT
sticker-462

€ 0,267

Each (On a Reel of 250) (be PVM)

€ 0,323

Each (On a Reel of 250) (su PVM)

Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Serija

NexFET

Pakuotės tipas

VSON-CLIP

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

8 W

Transistor Configuration

Dual Base

Plotis

3.6mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+125 °C

Ilgis

4.6mm

Minimali darbinė temperatūra

-40 °C

Forward Diode Voltage

0.24V

Aukštis

1mm

Kilmės šalis

Philippines

Produkto aprašymas

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more