N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STMicroelectronics STW42N65M5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M5
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
79 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
100 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.75mm
Plotis
5.15mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
20.15mm
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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€ 6,18
€ 6,18 už 1 vnt. (be PVM)
€ 7,48
€ 7,48 už 1 vnt. (su PVM)
Standartas
1
€ 6,18
€ 6,18 už 1 vnt. (be PVM)
€ 7,48
€ 7,48 už 1 vnt. (su PVM)
Standartas
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh M5
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
79 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
100 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
15.75mm
Plotis
5.15mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
20.15mm
Produkto aprašymas
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products