STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin D2PAK STB16NF06LT4

RS kodas: 168-7553Gamintojas: STMicroelectronicsGamintojo kodas: STB16NF06LT4
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

60 V

Serija

STripFET

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Ilgis

10.75mm

Typical Gate Charge @ Vgs

7.3 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Number of Elements per Chip

1

Plotis

10.4mm

Aukštis

4.6mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Sandėlio informacija laikinai nepasiekiama.

€ 714,40

€ 0,714 Each (On a Reel of 1000) (be PVM)

€ 864,42

€ 0,864 Each (On a Reel of 1000) (su PVM)

STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin D2PAK STB16NF06LT4
sticker-462

€ 714,40

€ 0,714 Each (On a Reel of 1000) (be PVM)

€ 864,42

€ 0,864 Each (On a Reel of 1000) (su PVM)

STMicroelectronics STripFET N-Channel MOSFET, 16 A, 60 V, 3-Pin D2PAK STB16NF06LT4
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

60 V

Serija

STripFET

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Ilgis

10.75mm

Typical Gate Charge @ Vgs

7.3 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+175 °C

Number of Elements per Chip

1

Plotis

10.4mm

Aukštis

4.6mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more