N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E

RS kodas: 829-0627Gamintojas: STMicroelectronicsGamintojo kodas: PD55015-E
brand-logo
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

PowerSO

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+165 °C

Ilgis

9.6mm

Plotis

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Aukštis

3.6mm

Produkto aprašymas

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 16,34

už 1 vnt. (be PVM)

€ 19,77

už 1 vnt. (su PVM)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Pasirinkite pakuotės tipą
sticker-462

€ 16,34

už 1 vnt. (be PVM)

€ 19,77

už 1 vnt. (su PVM)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

PowerSO

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+165 °C

Ilgis

9.6mm

Plotis

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Aukštis

3.6mm

Produkto aprašymas

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more