Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
340 mA, 510 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
4 Ω, 10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
3mm
Typical Gate Charge @ Vgs
1.1 nC @ 10 V, 1.6 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 3,94
€ 0,394 Each (In a Pack of 10) (be PVM)
€ 4,77
€ 0,477 Each (In a Pack of 10) (su PVM)
Standartas
10

€ 3,94
€ 0,394 Each (In a Pack of 10) (be PVM)
€ 4,77
€ 0,477 Each (In a Pack of 10) (su PVM)
Standartas
10

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
10 - 90 | € 0,394 | € 3,94 |
100 - 240 | € 0,34 | € 3,40 |
250 - 490 | € 0,295 | € 2,95 |
500 - 990 | € 0,259 | € 2,59 |
1000+ | € 0,237 | € 2,37 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N, P
Maximum Continuous Drain Current
340 mA, 510 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
4 Ω, 10 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
3mm
Typical Gate Charge @ Vgs
1.1 nC @ 10 V, 1.6 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.