Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Pakuotės tipas
TO-3P
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
15.8 x 5 x 20.1mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Patikrinkite dar kartą.
€ 1,235
Each (In a Tube of 30) (be PVM)
€ 1,494
Each (In a Tube of 30) (su PVM)
30
€ 1,235
Each (In a Tube of 30) (be PVM)
€ 1,494
Each (In a Tube of 30) (su PVM)
30
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Pakuotės tipas
TO-3P
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
15.8 x 5 x 20.1mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.