N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C

RS kodas: 181-1907Gamintojas: onsemiGamintojo kodas: FDP8D5N10C
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Plotis

4.67mm

Aukštis

15.21mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

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Patikrinkite dar kartą.

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€ 2,612

Each (In a Pack of 2) (be PVM)

€ 3,161

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
Pasirinkite pakuotės tipą
sticker-462

€ 2,612

Each (In a Pack of 2) (be PVM)

€ 3,161

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 onsemi FDP8D5N10C
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 8€ 2,612€ 5,22
10 - 98€ 2,232€ 4,46
100 - 248€ 1,805€ 3,61
250 - 498€ 1,71€ 3,42
500+€ 1,615€ 3,23

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Plotis

4.67mm

Aukštis

15.21mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more