onsemi PowerTrench P-Channel MOSFET, 22 A, 150 V, 8-Pin PQFN8 FDMS86263P

RS kodas: 864-8486PGamintojas: onsemiGamintojo kodas: FDMS86263P
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

150 V

Serija

PowerTrench

Pakuotės tipas

PQFN8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

94 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Plotis

5.85mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Sandėlio informacija laikinai nepasiekiama.

€ 128,25

€ 2,565 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 155,18

€ 3,104 Už kiekviena vnt. (tiekiama riteje) (su PVM)

onsemi PowerTrench P-Channel MOSFET, 22 A, 150 V, 8-Pin PQFN8 FDMS86263P
Pasirinkite pakuotės tipą
sticker-462

€ 128,25

€ 2,565 Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 155,18

€ 3,104 Už kiekviena vnt. (tiekiama riteje) (su PVM)

onsemi PowerTrench P-Channel MOSFET, 22 A, 150 V, 8-Pin PQFN8 FDMS86263P
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Ritė
50 - 95€ 2,565€ 12,82
100+€ 2,185€ 10,92

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

150 V

Serija

PowerTrench

Pakuotės tipas

PQFN8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

94 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Plotis

5.85mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more