Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
9.9 x 4.5 x 15.7mm
Produkto aprašymas
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,047
Each (In a Tube of 50) (be PVM)
€ 1,267
Each (In a Tube of 50) (su PVM)
50
€ 1,047
Each (In a Tube of 50) (be PVM)
€ 1,267
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
50 - 50 | € 1,047 | € 52,34 |
100 - 200 | € 0,984 | € 49,19 |
250+ | € 0,942 | € 47,09 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
9.9 x 4.5 x 15.7mm
Produkto aprašymas
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.