Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
278 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
16.25 x 5.3 x 21.4mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
2615pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
0.65mJ
Kilmės šalis
Vietnam
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,888
Each (In a Tube of 30) (be PVM)
€ 3,494
Each (In a Tube of 30) (su PVM)
30
€ 2,888
Each (In a Tube of 30) (be PVM)
€ 3,494
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
30 - 90 | € 2,888 | € 86,62 |
120 - 240 | € 2,468 | € 74,02 |
270 - 480 | € 2,362 | € 70,88 |
510 - 990 | € 2,10 | € 63,00 |
1020+ | € 1,785 | € 53,55 |
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
278 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
16.25 x 5.3 x 21.4mm
Minimali darbinė temperatūra
-40 °C
Gate Capacitance
2615pF
Maksimali darbinė temperatūra
+175 °C
Energy Rating
0.65mJ
Kilmės šalis
Vietnam
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.