NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
Techniniai dokumentai
Specifikacijos
Markė
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23 (TO-236AB)
Kaiščių skaičius
3
Matmenys
3 x 1.4 x 1mm
Minimali darbinė temperatūra
-65 °C
Aukštis
1mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.4mm
Kilmės šalis
China
Produkto aprašymas
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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€ 1,23
€ 0,123 Each (In a Pack of 10) (be PVM)
€ 1,49
€ 0,149 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 1,23
€ 0,123 Each (In a Pack of 10) (be PVM)
€ 1,49
€ 0,149 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,123 | € 1,23 |
| 50 - 90 | € 0,112 | € 1,12 |
| 100 - 240 | € 0,105 | € 1,05 |
| 250 - 490 | € 0,10 | € 1,00 |
| 500+ | € 0,086 | € 0,86 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-23 (TO-236AB)
Kaiščių skaičius
3
Matmenys
3 x 1.4 x 1mm
Minimali darbinė temperatūra
-65 °C
Aukštis
1mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.4mm
Kilmės šalis
China
Produkto aprašymas
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products