N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV55ENEAR

RS kodas: 151-3187Gamintojas: NexperiaGamintojo kodas: PMV55ENEAR
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

8.36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

12.7 nC @ 10 V

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Automotive Standard

AEC-Q101

Aukštis

1mm

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€ 0,359

Each (In a Pack of 25) (be PVM)

€ 0,434

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV55ENEAR
Pasirinkite pakuotės tipą
sticker-462

€ 0,359

Each (In a Pack of 25) (be PVM)

€ 0,434

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV55ENEAR
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 225€ 0,359€ 8,98
250 - 600€ 0,195€ 4,87
625 - 1225€ 0,19€ 4,75
1250 - 2475€ 0,186€ 4,66
2500+€ 0,181€ 4,54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

8.36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

12.7 nC @ 10 V

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Automotive Standard

AEC-Q101

Aukštis

1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more