N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R

RS kodas: 170-4846Gamintojas: NexperiaGamintojo kodas: PMV30UN2R
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

20 V

Serija

PMV30UN2

Pakuotės tipas

TO-236

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Plotis

1.4mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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Patikrinkite dar kartą.

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€ 0,127

Each (On a Reel of 3000) (be PVM)

€ 0,154

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R
sticker-462

€ 0,127

Each (On a Reel of 3000) (be PVM)

€ 0,154

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,127€ 381,90
6000 - 12000€ 0,123€ 367,65
15000 - 27000€ 0,119€ 356,25
30000 - 72000€ 0,113€ 339,15
75000+€ 0,111€ 333,45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

20 V

Serija

PMV30UN2

Pakuotės tipas

TO-236

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Plotis

1.4mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more