N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215

RS kodas: 103-7554Gamintojas: NexperiaGamintojo kodas: BSH103,215
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,147

Each (On a Reel of 3000) (be PVM)

€ 0,178

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 441,75
6000€ 883,50
9000€ 1 325,25
12000€ 1 767,00
15000€ 2 208,75
18000€ 2 650,50
21000€ 3 092,25
24000€ 3 534,00
27000€ 3 975,75
30000€ 4 417,50
33000€ 4 859,25
36000€ 5 301,00
39000€ 5 742,75
42000€ 6 184,50
45000€ 6 626,25
sticker-462

€ 0,147

Each (On a Reel of 3000) (be PVM)

€ 0,178

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 Nexperia BSH103,215
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 441,75
6000€ 883,50
9000€ 1 325,25
12000€ 1 767,00
15000€ 2 208,75
18000€ 2 650,50
21000€ 3 092,25
24000€ 3 534,00
27000€ 3 975,75
30000€ 4 417,50
33000€ 4 859,25
36000€ 5 301,00
39000€ 5 742,75
42000€ 6 184,50
45000€ 6 626,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Nexperia

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Plotis

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more