N-Channel MOSFET, 153 A, 100 V, 3-Pin TO-220 MagnaChip MDP1921TH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Plotis
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.51mm
Kilmės šalis
Korea, Republic Of
Produkto aprašymas
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
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€ 1,89
Each (In a Tube of 10) (be PVM)
€ 2,287
Each (In a Tube of 10) (su PVM)
10
€ 1,89
Each (In a Tube of 10) (be PVM)
€ 2,287
Each (In a Tube of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 10 - 40 | € 1,89 | € 18,90 |
| 50 - 90 | € 1,68 | € 16,80 |
| 100 - 290 | € 1,522 | € 15,22 |
| 300 - 490 | € 1,522 | € 15,22 |
| 500+ | € 1,47 | € 14,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Plotis
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.51mm
Kilmės šalis
Korea, Republic Of
Produkto aprašymas
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products