N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
44.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
20.7 nC @ 10 V
Plotis
6.22mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
2.39mm
Kilmės šalis
Korea, Republic Of
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Patikrinkite dar kartą.
€ 0,305
Each (On a Reel of 25) (be PVM)
€ 0,369
Each (On a Reel of 25) (su PVM)
Standartas
25
€ 0,305
Each (On a Reel of 25) (be PVM)
€ 0,369
Each (On a Reel of 25) (su PVM)
Standartas
25
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 25 - 100 | € 0,305 | € 7,62 |
| 125 - 225 | € 0,299 | € 7,48 |
| 250 - 475 | € 0,295 | € 7,39 |
| 500 - 2975 | € 0,292 | € 7,29 |
| 3000+ | € 0,289 | € 7,22 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
44.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
20.7 nC @ 10 V
Plotis
6.22mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.1V
Aukštis
2.39mm
Kilmės šalis
Korea, Republic Of
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products