IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2

RS kodas: 146-4398Gamintojas: IXYSGamintojo kodas: IXFN150N65X2
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

650 V

Serija

HiperFET

Pakuotės tipas

SOT-227

Tvirtinimo tipas

Screw Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

25.07mm

Ilgis

38.23mm

Typical Gate Charge @ Vgs

335 @ 10 V nC

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Aukštis

9.6mm

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Sandėlio informacija laikinai nepasiekiama.

€ 52,72

€ 52,72 už 1 vnt. (be PVM)

€ 63,79

€ 63,79 už 1 vnt. (su PVM)

IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2
sticker-462

€ 52,72

€ 52,72 už 1 vnt. (be PVM)

€ 63,79

€ 63,79 už 1 vnt. (su PVM)

IXYS HiperFET N-Channel MOSFET, 145 A, 650 V, 4-Pin SOT-227 IXFN150N65X2
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

650 V

Serija

HiperFET

Pakuotės tipas

SOT-227

Tvirtinimo tipas

Screw Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Plotis

25.07mm

Ilgis

38.23mm

Typical Gate Charge @ Vgs

335 @ 10 V nC

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Aukštis

9.6mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more