N-Channel MOSFET Transistor, 1.2 A, 30 V, 3-Pin SOT-23 International Rectifier IRLML2803
Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Plotis
1.4mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
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P.O.A.
Each (In a Pack of 5) (be PVM)
5
P.O.A.
Each (In a Pack of 5) (be PVM)
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Plotis
1.4mm
Serija
HEXFET
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products